TPCF8101(TE85L,F) datasheet

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• Маркировка
  TPCF8101(TE85L,F)
• Производитель
  TOSHIBA Semiconductor
• Описание
  TOSHIBA Semiconductor TPCF8101(TE85L,F) Configuration: Single Hex Drain Continuous Drain Current: 6 A Current - Continuous Drain (id) @ 25?° C: 6A Drain To Source Voltage (vdss): 12V Drain-source Breakdown Voltage: - 12 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 18nC @ 5V Gate-source Breakdown Voltage: 8 V Input Capacitance (ciss) @ Vds: 1600pF @ 10V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: VS-8 (2-3U1A) Power - Max: 700mW Power Dissipation: 2.5 W Rds On (max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V Resistance Drain-source Rds (on): 0.028 Ohms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 1.2V @ 200?µA Other Names: TPCF8101(TE85L,F), TPCF8101FTR
• Количество страниц
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• Формат
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TPCF8101(TE85L,F) datasheet